Aphotocell is operating in saturation mode with a photocurrent 4.8mua when a monochromatic radiation of wavelength 3000å and power 1 mw is incident. when another monochromatic radiation of wavelength 1650å and power 5 mw is incident, it is observed that maximum velocity of
photoelectron increases to two times. assuming efficiency of photoelectron generation per incident to be same for both the cases, calculate,
a. threshold wavelength for the cell
b. efficiency of photoelectron generation.[( no. of photoelectrons emitted per incident photon) ×100]
c. saturation current in the second case
thus k.E Max = hc/λ -w
k.e 1 = E1- w
k.e2 = E2-w
= (12400/1650)- w
= 7.51 -w
since k.e directly proportional to (velocity)^2
v2 =2v1 thus ke2 =4 ke1
= > 7.51-w = 16.51-4w
=> 3w = 9
=> w =3
threshold energy = hc/threshold wavelength
threshold wavelength = 12400/3 = 4133 Å
E1 = 4.13 ev = 6.6*10^-19 ws
photon incident per second = power incident /E1
= 10^-3/6.6*10^-19 = 1.52 * 10 ^15 per second
efficiency% = (photo current /photon incident*e)*100
= (4.8*10^-6/1.6*10^-19*1.52*10^15) *100
= (1.97/100)*100 = 1.97%
photon incident per second in second case
= power incident (P2) /E2
= 5*10^-3 /7.51*1.6*10^-19
saturation current = efficiency*photon incident*e
= (1.97/100) *4.16*10^15*1.6*10^-19
= 13.11*10^-6 ampere
A photocell is operating in saturation mode with a photocurrent 4.8MuA when a monochromatic radiation of wavelength 3000Å and power 1 mW is incident. When another monochromatic radiation of wavelength 1650Å and power 5 mW is incident, it is observed that maximum velocity of
photoelectron increases to two times. Assuming efficiency of photoelectron generation per incident to be same for both the cases, calculate,
a. Threshold wavelength for the cell
b. efficiency of photoelectron generation.[( No. of photoelectrons emitted per incident photon) ×100]
c. Saturation current in the second case
A silicon diode has a reverse current of 5 mikroA at 25°C and 100 mikroA at 100°C. What are the values of saturation current and surface-leakage current at 25°C?
With my understanding about electronic devices, I’m writing the answer.
Definition for leakage current, the current consumption of the device during non operating mode.
Definition for saturation current, the maximum current flow allowed through the device(this will not work well in MOSFET and its other way around).
answering your question, the diode is two terminal device and I would define the leakage current is reverse saturation current. Saturation current for the diode in forward bias is maximum forward current and in reverse mode is reverse saturation current.
Hope, answered your question
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I don't know the answer
The saturation current (or scale current), more accurately the reverse saturation current, is that part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage. (
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so long question ask another
v = final velocity
u = initial velocity
s = Distance
a = Acceleration
✨ First case,
v = 0 m/s
u = 10 m/s
s = 20 m.
➡️ v^2 = u^2 + 2as
Or, 0 = 100 + 40a
Or, a = - 100 /40 = - 5/2.
.°. a = - 5/2 m/s^2
v = 0 m/s
u = 20 m/s
a = - 5/2 m/s^2
➡️ v^2 = u^2 + 2as
Or, 0 = 400 - 5s
Or, s = 400/5 = 80.
.°. The stopping distance will be 80 m.
i can't understand